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| GF1A thru GF1M Vishay Semiconductors formerly General Semiconductor Surface Mount Glass Passivated Rectifier DO-214BA (GF1) 0.066 (1.68) 0.040 (1.02) ted* aten P (R) Reverse Voltage 50 to 1000V Forward Current 1.0A Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.094 MAX. (2.38 MAX.) Dimensions in inches and (millimeters) 0.187 (4.75) 0.167 (4.24) 0.015 (0.38) 0.0065 (0.17) Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, brazen-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF 0.118 (3.00) 0.100 (2.54) 0.108 (2.74) 0.098 (2.49) Features * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Ideal for surface mount automotive applications * High temperature metallurgically bonded construction * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * Built-in strain relief * Easy pick and place * High temperature soldering guaranteed: 450C/5 seconds at terminals. * Complete device submersible temperature of 265C for 10 seconds in solder bath 0.060 (1.52) 0.030 (0.76) 0.006 (0.152) TYP. 0.226 (5.74) 0.196 (4.98) 0.114 (2.90) 0.094 (2.39) Mechanical Data Case: JEDEC DO-214BA, molded plastic over glass body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0048 oz, 0.120 g Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL = 125C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Typical thermal resistance(1) Operating junction and storage temperature range VRRM VRMS VDC IF(AV) IFSM RJA RJL TJ,TSTG Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit GA 50 35 50 GB 100 70 100 GD 200 140 200 GG 400 280 400 1.0 30 80 26 -65 to +175 GJ 600 420 600 GK 800 560 800 GM 1000 700 1000 V V V A A C/W C Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage Typical reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25 A Typical junction capacitance at 4.0V, 1MHz TA = 25C TA = 125C Symbol GF1A GF1B GF1D GF1G GF1J GF1K GF1M Unit VF IR trr CJ 1.10 5.0 50 3.0 15 1.20 V A s pF Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas Document Number 88617 08-Jul-02 www.vishay.com 1 GF1A thru GF1M Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curve 30 Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TJ = TJ max. 8.3ms Single Half Sine-Wave (JEDEC Method) Average Forward Rectified Current (A) 60 HZ Resistive or Inductive Load 25 1.0 20 15 10 5 0.5 P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0mm) Copper Pad Areas 0 100 110 120 130 140 150 160 175 0 1 10 100 Lead Temperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics IF -- Instantaneous Forward Current (A) 10 10 Fig. 4 - Typical Reverse Characteristics IR -- Instantaneous Reverse Leakage Current (mA) 1 1 TJ = 100C 0.1 Pulse Width = 300s 1% Duty Cycle TJ = 25C 0.6 0.8 1.0 1.2 1.4 1.6 0.1 TJ = 25C 0.01 0 20 40 60 80 100 0.01 0.4 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 30 100 Fig. 6 - Typical Transient Thermal Impedance Transient Thermal Impedance (C/W) Mounted on 0.2 x 0.27" (5.0 x 7.0mm) Copper Pad Areas 10 pF -- Junction Capacitance TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p 10 1 1 1 10 100 0.1 0.01 0.1 1 10 100 Reverse Voltage (V) www.vishay.com 2 t -- Pulse Duration (sec.) Document Number 88617 08-Jul-02 |
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